SS8050DBU
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- Mfr.Part #
- SS8050DBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92-3
- Stock
- 4,196
- In Stock ：
- 4,196
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 190MHz
- Weight :
- 179mg
- ECCN Code :
- EAR99
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Length :
- 4.58mm
- Collector Emitter Voltage (VCEO) :
- 25V
- Collector Emitter Saturation Voltage :
- 500mV
- JESD-609 Code :
- e3
- Max Collector Current :
- 1.5A
- Voltage - Rated DC :
- 25V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1W
- Operating Temperature :
- 150°C TJ
- Height :
- 4.58mm
- Factory Lead Time :
- 6 Weeks
- Current Rating :
- 1.5A
- Number of Pins :
- 3
- Max Power Dissipation :
- 1W
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 25V
- Output Power :
- 2W
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- hFE Min :
- 85
- Polarity/Channel Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- SS8050
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Width :
- 3.86mm
- Number of Terminations :
- 3
- Datasheets
- SS8050DBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS8050DBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 80mA, 800mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.A transition frequency of 190MHz is present in the part.Collector current can be as low as 1.5A volts at its maximum.
SS8050DBU Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050DBU Applications
There are a lot of ON Semiconductor
SS8050DBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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