SS8050BBU
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- Mfr.Part #
- SS8050BBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92-3
- Stock
- 2,138
- In Stock ：
- 2,138
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 100mA 1V
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Voltage (VCEO) :
- 25V
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Through Hole
- Current Rating :
- 1.5A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- Transition Frequency :
- 190MHz
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Width :
- 3.86mm
- Transistor Type :
- NPN
- Max Collector Current :
- 1.5A
- hFE Min :
- 85
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 25V
- Packaging :
- Bulk
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Length :
- 4.58mm
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 1W
- Base Part Number :
- SS8050
- Collector Base Voltage (VCBO) :
- 40V
- Number of Elements :
- 1
- Weight :
- 179mg
- Gain Bandwidth Product :
- 100MHz
- Height :
- 4.58mm
- Collector Emitter Breakdown Voltage :
- 25V
- Mounting Type :
- Through Hole
- Power Dissipation :
- 1W
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2007
- Factory Lead Time :
- 7 Weeks
- Datasheets
- SS8050BBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS8050BBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 85 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 80mA, 800mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 190MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
SS8050BBU Features
the DC current gain for this device is 85 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050BBU Applications
There are a lot of ON Semiconductor
SS8050BBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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