SS8050CBU
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- Mfr.Part #
- SS8050CBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92-3
- Stock
- 159,639
- In Stock ：
- 159,639
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- BOTTOM
- hFE Min :
- 85
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Transition Frequency :
- 190MHz
- Factory Lead Time :
- 7 Weeks
- REACH SVHC :
- No SVHC
- Length :
- 4.58mm
- Frequency :
- 100MHz
- Width :
- 3.86mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current Rating :
- 1.5A
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Height :
- 4.58mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Base Part Number :
- SS8050
- Lead Free :
- Lead Free
- Max Collector Current :
- 1.5A
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 25V
- Mount :
- Through Hole
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Power Dissipation :
- 1W
- Published :
- 2017
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Voltage - Rated DC :
- 25V
- Weight :
- 179mg
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Datasheets
- SS8050CBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS8050CBU Overview
DC current gain in this device equals 120 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 80mA, 800mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1.5A current rating.As a result, the part has a transition frequency of 190MHz.In extreme cases, the collector current can be as low as 1.5A volts.
SS8050CBU Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050CBU Applications
There are a lot of ON Semiconductor
SS8050CBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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