SS8050-G
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- Mfr.Part #
- SS8050-G
- Manufacturer
- Comchip Technology
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A SOT23-3
- Stock
- 82,137
- In Stock ：
- 82,137
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- Manufacturer :
- Comchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 300mW
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Published :
- 2016
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Max Collector Current :
- 1.5A
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 400mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 25V
- Factory Lead Time :
- 10 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 100MHz
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 25V
- Transition Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PDSO-G3
- Datasheets
- SS8050-G
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SS8050-G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
SS8050-G Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 400mV @ 5mA, 50mA
a transition frequency of 100MHz
SS8050-G Applications
There are a lot of Comchip Technology
SS8050-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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