SQD19P06-60L_GE3

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Mfr.Part #
SQD19P06-60L_GE3
Manufacturer
Vishay
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET P-CH 60V 20A TO252
Stock
38,993
In Stock :
38,993

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Power Dissipation-Max :
46W Tc
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Current - Continuous Drain (Id) @ 25°C :
20A Tc
Drain to Source Resistance :
46mOhm
Input Capacitance (Ciss) (Max) @ Vds :
1490pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
60V
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Published :
2014
Supplier Device Package :
TO-252, (D-Pak)
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
55mOhm @ 19A, 10V
Factory Lead Time :
12 Weeks
Operating Temperature :
-55°C~175°C TJ
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Series :
Automotive, AEC-Q101, TrenchFET®
FET Type :
P-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
SQD19P06-60L_GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SQD19P06-60L_GE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, SQD19P06-60L_GE3 pinout, SQD19P06-60L_GE3 datasheet PDF, SQD19P06-60L_GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SQD19P06-60L_GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SQD19P06-60L_GE3


P-Channel Tape & Reel (TR) 55mOhm @ 19A, 10V ±20V 1490pF @ 25V 41nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

SQD19P06-60L_GE3 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1490pF @ 25V.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 46mOhm exists between the drain and source.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SQD19P06-60L_GE3 Features


single MOSFETs transistor is 46mOhm
a 60V drain to source voltage (Vdss)


SQD19P06-60L_GE3 Applications


There are a lot of Vishay Siliconix
SQD19P06-60L_GE3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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