SQD100N03-3M4_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

168 mJ

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

7349pF @ 15V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0034Ohm

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Series :

Automotive, AEC-Q101, TrenchFET®

Pulsed Drain Current-Max (IDM) :

160A

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Power Dissipation-Max :

136W Tc

Gate Charge (Qg) (Max) @ Vgs :

124nC @ 10V

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 20A, 10V

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

100A

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Surface Mount :

yes

Factory Lead Time :

12 Weeks

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

ECCN Code :

EAR99

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-252AA

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V