SQD100N02-3M5L_GE3
- Mfr.Part #
- SQD100N02-3M5L_GE3
- Manufacturer
- Vishay
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 100A TO252AA
- Stock
- 43,279
- In Stock :
- 43,279
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Max Junction Temperature (Tj) :
- 175°C
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Reach Compliance Code :
- Unknown
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- yes
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 30A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 100A
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Series :
- Automotive, AEC-Q101, TrenchFET®
- Height :
- 2.507mm
- Pulsed Drain Current-Max (IDM) :
- 300A
- Drain to Source Breakdown Voltage :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 38 ns
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- RoHS Status :
- RoHS Compliant
- JEDEC-95 Code :
- TO-252AA
- Terminal Position :
- Single
- FET Type :
- N-Channel
- Power Dissipation :
- 83W
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 10V
- Drain-source On Resistance-Max :
- 0.0035Ohm
- Factory Lead Time :
- 12 Weeks
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Turn On Delay Time :
- 15 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 83W Tc
- Datasheets
- SQD100N02-3M5L_GE3
N-Channel Tape & Reel (TR) 3.5m Ω @ 30A, 10V ±20V 5500pF @ 10V 110nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
SQD100N02-3M5L_GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5500pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38 ns.Peak drain current is 300A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
SQD100N02-3M5L_GE3 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 300A.
SQD100N02-3M5L_GE3 Applications
There are a lot of Vishay Siliconix
SQD100N02-3M5L_GE3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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