SQD100N04-3M6_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

6700pF @ 25V

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.0036Ohm

Published :

2017

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 20A, 10V

JEDEC-95 Code :

TO-252AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Pulsed Drain Current-Max (IDM) :

400A

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

192 mJ

Number of Elements :

1

DS Breakdown Voltage-Min :

40V

Reach Compliance Code :

Unknown

Terminal Position :

Single

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Power Dissipation-Max :

136W Tc

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

40V

Drain Current-Max (Abs) (ID) :

100A

Vgs(th) (Max) @ Id :

3.5V @ 250µA