SQD100N03-3M2L_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

JEDEC-95 Code :

TO-252AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

30V

Series :

Automotive, AEC-Q101, TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

6316pF @ 15V

Surface Mount :

yes

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Published :

2017

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0032Ohm

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

136W Tc

Number of Elements :

1

Terminal Position :

Single

Transistor Element Material :

SILICON

Weight :

1.437803g

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 20A, 10V