SQD10N30-330H_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

2.507mm

Vgs(th) (Max) @ Id :

4.4V @ 250μA

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

12 Weeks

Turn On Delay Time :

10 ns

Rds On (Max) @ Id, Vgs :

330m Ω @ 14A, 10V

Max Junction Temperature (Tj) :

175°C

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2190pF @ 25V

Power Dissipation-Max :

107W Tc

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

10A

Drain to Source Breakdown Voltage :

300V

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

20 ns

Vgs (Max) :

±30V

Number of Channels :

1

ECCN Code :

EAR99

Series :

Automotive, AEC-Q101, TrenchFET®

Power Dissipation :

107W