SPN04N60S5
- Mfr.Part #
- SPN04N60S5
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 800MA SOT223-4
- Stock
- 40,609
- In Stock :
- 40,609
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Package / Case :
- TO-261-4, TO-261AA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Contains Lead
- Current Rating :
- 700mA
- RoHS Status :
- Non-RoHS Compliant
- Power Dissipation :
- 1.8W
- Fall Time (Typ) :
- 20 ns
- Turn-Off Delay Time :
- 130 ns
- Pin Count :
- 4
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Voltage - Rated DC :
- 650V
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 0.8A
- Drain to Source Breakdown Voltage :
- 600V
- Number of Terminations :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Series :
- CoolMOS™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2004
- Rise Time :
- 20ns
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 1.8W Ta
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 2.8A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 800mA Ta
- Number of Pins :
- 4
- Pulsed Drain Current-Max (IDM) :
- 3A
- Continuous Drain Current (ID) :
- 800mA
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.95Ohm
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 5.5V @ 200µA
- Datasheets
- SPN04N60S5

N-Channel Tape & Reel (TR) 950m Ω @ 2.8A, 10V ±20V 600pF @ 25V 17nC @ 10V TO-261-4, TO-261AA
SPN04N60S5 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 800mA amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.A device can conduct a maximum continuous current of [0.8A] according to its drain current.It is [130 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 3A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
SPN04N60S5 Features
a continuous drain current (ID) of 800mA
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 3A.
SPN04N60S5 Applications
There are a lot of Infineon Technologies
SPN04N60S5 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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