SPN02N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Continuous Drain Current (ID) :

400mA

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Nominal Vgs :

3 V

Number of Pins :

4

Vgs (Max) :

±20V

Power Dissipation :

1.8W

Drain to Source Breakdown Voltage :

600V

Power Dissipation-Max :

1.8W Ta

Voltage - Rated DC :

650V

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.9V @ 80µA

Transistor Element Material :

SILICON

Current Rating :

400mA

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Number of Terminations :

4

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Published :

2004

Mount :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

Turn-Off Delay Time :

68 ns

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.1A, 10V

Rise Time :

3ns

ECCN Code :

EAR99

Series :

CoolMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

3 ns

Current - Continuous Drain (Id) @ 25°C :

400mA Ta

Element Configuration :

Single