SPN01N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Power Dissipation-Max :

1.8W Ta

Mount :

Surface Mount

Terminal Position :

Dual

HTS Code :

8541.29.00.95

Voltage - Rated DC :

650V

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Packaging :

Tape and Reel (TR)

Package / Case :

TO-261-4, TO-261AA

Reach Compliance Code :

Unknown

Turn-Off Delay Time :

60 ns

Series :

CoolMOS™

Number of Pins :

3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Drain to Source Breakdown Voltage :

650V

Published :

2004

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

3 V

Transistor Element Material :

SILICON

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

6Ohm

Terminal Finish :

MATTE TIN

Rise Time :

30ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Number of Terminations :

4

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Terminal Form :

Gull wing

Fall Time (Typ) :

30 ns

Rds On (Max) @ Id, Vgs :

6 Ω @ 500mA, 10V

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current Rating :

300mA

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.8W

Mounting Type :

Surface Mount

FET Type :

N-Channel

Vgs (Max) :

±20V

ECCN Code :

EAR99

JESD-609 Code :

e3

Continuous Drain Current (ID) :

300mA

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

1.6A

JESD-30 Code :

R-PDSO-G4