SPN03N60C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Terminal Position :

Dual

Terminal Finish :

Tin/Lead (Sn/Pb)

HTS Code :

8541.29.00.95

Transistor Element Material :

SILICON

Voltage - Rated DC :

650V

Nominal Vgs :

3 V

Package / Case :

TO-261-4, TO-261AA

Power Dissipation-Max :

1.8W Ta

JESD-609 Code :

e0

Number of Elements :

1

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

700mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Turn-Off Delay Time :

64 ns

Pin Count :

4

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Fall Time (Typ) :

3 ns

Drain to Source Breakdown Voltage :

650V

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

0.7A

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2A, 10V

Transistor Application :

SWITCHING

Number of Terminations :

4

Current Rating :

700mA

Lead Free :

Contains Lead

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

700mA Ta

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

3A

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.9V @ 135µA

JESD-30 Code :

R-PDSO-G4

Mount :

Surface Mount

Rise Time :

3ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.8W

Mounting Type :

Surface Mount

Series :

CoolMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing