SPN03N60S5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Pin Count :

4

Mounting Type :

Surface Mount

FET Type :

N-Channel

Turn-Off Delay Time :

120 ns

JESD-609 Code :

e3

Published :

2004

Continuous Drain Current (ID) :

700mA

Current Rating :

700mA

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Vgs(th) (Max) @ Id :

5.5V @ 135µA

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

12.8nC @ 10V

Fall Time (Typ) :

20 ns

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Power Dissipation-Max :

1.8W Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

4

Voltage - Rated DC :

600V

Drain to Source Breakdown Voltage :

600V

Number of Pins :

4

Turn On Delay Time :

35 ns

Pulsed Drain Current-Max (IDM) :

3A

Avalanche Energy Rating (Eas) :

100 mJ

Rise Time :

20ns

Transistor Element Material :

SILICON

Additional Feature :

High Voltage

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-261-4, TO-261AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.8W

Terminal Finish :

MATTE TIN

Width :

3.5mm

Length :

6.5mm

Drain Current-Max (Abs) (ID) :

0.7A

Height :

1.6mm

Current - Continuous Drain (Id) @ 25°C :

700mA Ta

Vgs (Max) :

±20V

Lead Free :

Contains Lead

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2A, 10V

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Case Connection :

DRAIN

Series :

CoolMOS™