SPN02N60S5
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- Mfr.Part #
- SPN02N60S5
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 400MA SOT223-4
- Stock
- 22,742
- In Stock ：
- 22,742
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 600V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Lead Free :
- Contains Lead
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 15 ns
- Power Dissipation-Max :
- 1.8W Ta
- Published :
- 2004
- Power Dissipation :
- 1.8W
- Gate to Source Voltage (Vgs) :
- 3.5V
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 2.2A
- Vgs(th) (Max) @ Id :
- 5.5V @ 80μA
- FET Type :
- N-Channel
- Rise Time :
- 15ns
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 110 ns
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 400mA
- Drain-source On Resistance-Max :
- 3Ohm
- HTS Code :
- 8541.29.00.95
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 7.4nC @ 10V
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 3 Ω @ 1.1A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 400mA Ta
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 600V
- Drain Current-Max (Abs) (ID) :
- 0.4A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-30 Code :
- R-PDSO-G4
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Current Rating :
- 400mA
- Series :
- CoolMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Additional Feature :
- High Voltage
- Number of Terminations :
- 4
- Transistor Element Material :
- SILICON
- Datasheets
- SPN02N60S5
N-Channel Tape & Reel (TR) 3 Ω @ 1.1A, 10V ±20V 250pF @ 25V 7.4nC @ 10V TO-261-4, TO-261AA
SPN02N60S5 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 50 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 250pF @ 25V.This device conducts a continuous drain current (ID) of 400mA, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.4A.When the device is turned off, a turn-off delay time of 110 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 2.2A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 3.5V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SPN02N60S5 Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 400mA
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 2.2A.
SPN02N60S5 Applications
There are a lot of Infineon Technologies
SPN02N60S5 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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