SPD30P06P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Vgs(th) (Max) @ Id :

4V @ 1.7mA

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Current Rating :

-30A

Power Dissipation-Max :

125W Tc

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

20 ns

Voltage - Rated DC :

-60V

Published :

2002

Pin Count :

4

Continuous Drain Current (ID) :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Rise Time :

11ns

Rds On (Max) @ Id, Vgs :

75m Ω @ 21.5A, 10V

Pulsed Drain Current-Max (IDM) :

120A

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

20

Drain-source On Resistance-Max :

0.075Ohm

Number of Terminations :

2

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1535pF @ 25V

Drain to Source Breakdown Voltage :

-60V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Turn-Off Delay Time :

30 ns

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Lead Free :

Contains Lead

Avalanche Energy Rating (Eas) :

250 mJ

Series :

SIPMOS®

Power Dissipation :

125W