SPD30N03S2L-10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

120A

Transistor Element Material :

SILICON

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

10m Ω @ 30A, 10V

Vgs (Max) :

±20V

Turn-Off Delay Time :

27 ns

Qualification Status :

Not Qualified

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Rating :

30A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

150 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Continuous Drain Current (ID) :

30A

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0146Ohm

Number of Terminations :

2

Series :

OptiMOS™

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Peak Reflow Temperature (Cel) :

260

RoHS Status :

Non-RoHS Compliant

Fall Time (Typ) :

17 ns

Power Dissipation-Max :

100W Tc

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Case Connection :

DRAIN

Rise Time :

13ns

Element Configuration :

Single

Published :

2003

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

41.8nC @ 10V

ECCN Code :

EAR99

Number of Elements :

1

Power Dissipation :

100W

Transistor Application :

SWITCHING

Voltage - Rated DC :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2V @ 50μA

Terminal Finish :

MATTE TIN

Terminal Form :

Gull wing