SPD30N03S2L-10

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Power Dissipation-Max :

100W Tc

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

120A

Terminal Finish :

MATTE TIN

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Number of Elements :

1

Terminal Form :

Gull wing

Power Dissipation :

100W

Operating Temperature :

-55°C~175°C TJ

Rise Time :

13ns

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

10m Ω @ 30A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

150 mJ

Gate Charge (Qg) (Max) @ Vgs :

41.8nC @ 10V

Element Configuration :

Single

Drain-source On Resistance-Max :

0.0146Ohm

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Published :

2003

JESD-30 Code :

R-PSSO-G2

Current Rating :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

30V

Turn-Off Delay Time :

27 ns

Fall Time (Typ) :

17 ns

Pin Count :

4

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

1550pF @ 25V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

FET Type :

N-Channel

Continuous Drain Current (ID) :

30A

Vgs(th) (Max) @ Id :

2V @ 50μA

Series :

OptiMOS™

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON