SPD30N03S2L-10
- Mfr.Part #
- SPD30N03S2L-10
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 30A TO252-3
- Stock
- 11,511
- In Stock :
- 11,511
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 27 ns
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1550pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- 30A
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 30A, 10V
- Continuous Drain Current (ID) :
- 30A
- Vgs (Max) :
- ±20V
- RoHS Status :
- Non-RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pin Count :
- 4
- Published :
- 2003
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Fall Time (Typ) :
- 17 ns
- Voltage - Rated DC :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 41.8nC @ 10V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 100W
- Vgs(th) (Max) @ Id :
- 2V @ 50μA
- Terminal Finish :
- MATTE TIN
- Transistor Application :
- SWITCHING
- Rise Time :
- 13ns
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 120A
- Drain-source On Resistance-Max :
- 0.0146Ohm
- Power Dissipation-Max :
- 100W Tc
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Series :
- OptiMOS™
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- SPD30N03S2L-10

N-Channel Tape & Reel (TR) 10m Ω @ 30A, 10V ±20V 1550pF @ 25V 41.8nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N03S2L-10 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 150 mJ.A device's maximal input capacitance is 1550pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 27 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SPD30N03S2L-10 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 27 ns
based on its rated peak drain current 120A.
SPD30N03S2L-10 Applications
There are a lot of Infineon Technologies
SPD30N03S2L-10 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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