SPD30N06S2-23

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature (Max) :

175°C

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 25V

Avalanche Energy Rating (Eas) :

150 mJ

JESD-30 Code :

R-PSSO-G2

Max Power Dissipation :

100W

Vgs (Max) :

±20V

Number of Elements :

1

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

30A

Terminal Position :

Single

Qualification Status :

Not Qualified

Terminal Finish :

MATTE TIN

Voltage - Rated DC :

55V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

23m Ω @ 21A, 10V

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Current Rating :

30A

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

4V @ 50μA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.023Ohm

JESD-609 Code :

e3

FET Type :

N-Channel

Published :

2008

Reach Compliance Code :

Unknown

Pin Count :

4

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

120A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant