SPD30N03S2L07GBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Published :

2003

Turn On Delay Time :

8 ns

Radiation Hardening :

No

Number of Terminations :

2

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Drain-source On Resistance-Max :

0.0098Ohm

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

47 ns

Terminal Position :

Single

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 85µA

Avalanche Energy Rating (Eas) :

250 mJ

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2530pF @ 25V

Continuous Drain Current (ID) :

30A

Operating Temperature :

-55°C~175°C TJ

Series :

OptiMOS™

Rise Time :

17ns

Turn-Off Delay Time :

62 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Number of Elements :

1

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

120A

Power Dissipation-Max :

136W Tc

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 30A, 10V

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V