SPD30N06S2-15
- Mfr.Part #
- SPD30N06S2-15
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 30A TO252-3
- Stock
- 27,251
- In Stock :
- 27,251
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Pin Count :
- 4
- Case Connection :
- DRAIN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e0
- Rds On (Max) @ Id, Vgs :
- 14.7m Ω @ 30A, 10V
- RoHS Status :
- Non-RoHS Compliant
- JESD-30 Code :
- R-PSSO-G2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 80μA
- Published :
- 2003
- Power Dissipation :
- 136W
- Power Dissipation-Max :
- 136W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 55V
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 2070pF @ 25V
- Current Rating :
- 30A
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Mounting Type :
- Surface Mount
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 30A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Series :
- OptiMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Datasheets
- SPD30N06S2-15

N-Channel Tape & Reel (TR) 14.7m Ω @ 30A, 10V ±20V 2070pF @ 25V 52nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N06S2-15 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 240 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2070pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
SPD30N06S2-15 Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 30A
SPD30N06S2-15 Applications
There are a lot of Infineon Technologies
SPD30N06S2-15 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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