SPD30N06S2-15

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Mfr.Part #
SPD30N06S2-15
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 55V 30A TO252-3
Stock
27,251
In Stock :
27,251

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
52nC @ 10V
Qualification Status :
Not Qualified
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
JESD-609 Code :
e0
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~175°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
2
Avalanche Energy Rating (Eas) :
240 mJ
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
30A
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Current Rating :
30A
Pin Count :
4
JESD-30 Code :
R-PSSO-G2
Input Capacitance (Ciss) (Max) @ Vds :
2070pF @ 25V
Terminal Position :
Single
Terminal Finish :
Tin/Lead (Sn/Pb)
Vgs(th) (Max) @ Id :
4V @ 80μA
Published :
2003
Rds On (Max) @ Id, Vgs :
14.7m Ω @ 30A, 10V
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
OptiMOS™
Power Dissipation-Max :
136W Tc
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
FET Type :
N-Channel
Voltage - Rated DC :
55V
Vgs (Max) :
±20V
Lead Free :
Contains Lead
Power Dissipation :
136W
Additional Feature :
AVALANCHE RATED
RoHS Status :
Non-RoHS Compliant
Datasheets
SPD30N06S2-15
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies SPD30N06S2-15 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, SPD30N06S2-15 pinout, SPD30N06S2-15 datasheet PDF, SPD30N06S2-15 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies SPD30N06S2-15 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies SPD30N06S2-15


N-Channel Tape & Reel (TR) 14.7m Ω @ 30A, 10V ±20V 2070pF @ 25V 52nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

SPD30N06S2-15 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 240 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2070pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

SPD30N06S2-15 Features


the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 30A


SPD30N06S2-15 Applications


There are a lot of Infineon Technologies
SPD30N06S2-15 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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