SPD30N06S2-15
- Mfr.Part #
- SPD30N06S2-15
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 30A TO252-3
- Stock
- 27,251
- In Stock :
- 27,251
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 30A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Voltage - Rated DC :
- 55V
- Current Rating :
- 30A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2070pF @ 25V
- Lead Free :
- Contains Lead
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4V @ 80μA
- RoHS Status :
- Non-RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 14.7m Ω @ 30A, 10V
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Pin Count :
- 4
- JESD-609 Code :
- e0
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 136W Tc
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Power Dissipation :
- 136W
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Series :
- OptiMOS™
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2003
- Packaging :
- Tape and Reel (TR)
- Datasheets
- SPD30N06S2-15

N-Channel Tape & Reel (TR) 14.7m Ω @ 30A, 10V ±20V 2070pF @ 25V 52nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
SPD30N06S2-15 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 240 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2070pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
SPD30N06S2-15 Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 30A
SPD30N06S2-15 Applications
There are a lot of Infineon Technologies
SPD30N06S2-15 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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