SPD30N06S2-15

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Vgs (Max) :

±20V

Power Dissipation-Max :

136W Tc

Rds On (Max) @ Id, Vgs :

14.7m Ω @ 30A, 10V

JESD-609 Code :

e0

Continuous Drain Current (ID) :

30A

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

136W

Terminal Form :

Gull wing

Terminal Finish :

Tin/Lead (Sn/Pb)

Voltage - Rated DC :

55V

Terminal Position :

Single

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Current Rating :

30A

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 25V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 80μA

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Number of Elements :

1

Published :

2003

Avalanche Energy Rating (Eas) :

240 mJ

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Number of Terminations :

2

Lead Free :

Contains Lead

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE