SPD30N06S2-15

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Qualification Status :

Not Qualified

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e0

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

240 mJ

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

30A

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Current Rating :

30A

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 25V

Terminal Position :

Single

Terminal Finish :

Tin/Lead (Sn/Pb)

Vgs(th) (Max) @ Id :

4V @ 80μA

Published :

2003

Rds On (Max) @ Id, Vgs :

14.7m Ω @ 30A, 10V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

OptiMOS™

Power Dissipation-Max :

136W Tc

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

FET Type :

N-Channel

Voltage - Rated DC :

55V

Vgs (Max) :

±20V

Lead Free :

Contains Lead

Power Dissipation :

136W

Additional Feature :

AVALANCHE RATED

RoHS Status :

Non-RoHS Compliant