SPD30N03S2L-07

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

47 ns

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.0098Ohm

Terminal Finish :

Matte Tin (Sn)

Rise Time :

17ns

Voltage - Rated DC :

30V

Avalanche Energy Rating (Eas) :

250 mJ

Terminal Form :

Gull wing

Series :

OptiMOS™

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2530pF @ 25V

Continuous Drain Current (ID) :

30A

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Case Connection :

DRAIN

ECCN Code :

EAR99

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Current Rating :

30A

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Transistor Element Material :

SILICON

Published :

2003

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

136W

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

FET Type :

N-Channel

Turn-Off Delay Time :

62 ns

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Pin Count :

4

Vgs(th) (Max) @ Id :

2V @ 85µA

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

136W Tc

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 30A, 10V

Pulsed Drain Current-Max (IDM) :

120A