SPD30N03S2L-20

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Operating Temperature :

-55°C~175°C TJ

Published :

2003

Number of Terminations :

2

RoHS Status :

Non-RoHS Compliant

Rise Time :

11ns

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Element Configuration :

Single

Current Rating :

30A

Power Dissipation-Max :

60W Tc

Continuous Drain Current (ID) :

30A

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

17 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

FET Type :

N-Channel

Qualification Status :

Not Qualified

Voltage - Rated DC :

30V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Power Dissipation :

60W

Pulsed Drain Current-Max (IDM) :

120A

Drain to Source Breakdown Voltage :

30V

JEDEC-95 Code :

TO-252AA

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2V @ 23μA

Case Connection :

DRAIN

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Rds On (Max) @ Id, Vgs :

20m Ω @ 18A, 10V

Turn-Off Delay Time :

20 ns

Drain-source On Resistance-Max :

0.031Ohm

Avalanche Energy Rating (Eas) :

70 mJ

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Series :

OptiMOS™