SPD30N08S2-22

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

30A

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0215Ohm

Terminal Finish :

MATTE TIN

Published :

2003

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

240 mJ

Pin Count :

4

Mounting Type :

Surface Mount

Voltage - Rated DC :

75V

FET Type :

N-Channel

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

21.5m Ω @ 25A, 10V

Continuous Drain Current (ID) :

30A

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Power Dissipation-Max :

136W Tc

Vgs(th) (Max) @ Id :

4V @ 80μA

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

120A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Mount :

Surface Mount

ECCN Code :

EAR99

Terminal Form :

Gull wing

JESD-609 Code :

e3

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 25V

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Series :

OptiMOS™