SP8M7TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

*M7

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 5V

Max Power Dissipation :

2W

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

51m Ω @ 5A, 10V

Terminal Finish :

TIN COPPER

Rise Time :

50ns

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

Number of Terminations :

8

Operating Temperature :

150°C TJ

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

7A

FET Type :

N and P-Channel

Pulsed Drain Current-Max (IDM) :

20A

ECCN Code :

EAR99

Pin Count :

8

JESD-609 Code :

e2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

5A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 10V

Lead Free :

Lead Free

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

5A

Packaging :

Tape and Reel (TR)

Published :

2004

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Transistor Element Material :

SILICON

Terminal Position :

Dual

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5A 7A