SP8M6TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

*M6

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 10V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

5A 3.5A

Number of Terminations :

8

Published :

2004

Max Power Dissipation :

2W

FET Type :

N and P-Channel

Number of Elements :

2

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

5A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

51m Ω @ 5A, 10V

Mounting Type :

Surface Mount

Terminal Finish :

TIN COPPER

DS Breakdown Voltage-Min :

30V

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

10

FET Feature :

Logic Level Gate

Operating Temperature :

150°C TJ

Pin Count :

8

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rise Time :

15ns

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e2

Radiation Hardening :

No

Mount :

Surface Mount

Current Rating :

5A

Pulsed Drain Current-Max (IDM) :

20A

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 5V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

3.5A

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual