SP8M51FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

Terminal Position :

Dual

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Elements :

2

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101

Current - Continuous Drain (Id) @ 25°C :

3A Ta 2.5A Ta

Mounting Type :

Surface Mount

FET Feature :

Standard

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.19Ohm

Power - Max :

2W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Factory Lead Time :

20 Weeks

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-PDSO-G8

Rds On (Max) @ Id, Vgs :

170m Ω @ 3A, 10V, 290m Ω @ 2.5A, 10V

Packaging :

Cut Tape (CT)

Pulsed Drain Current-Max (IDM) :

12A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain Current-Max (Abs) (ID) :

3A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Published :

2017

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 10V 1550pF @ 25V

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 5V, 12.5nC @ 5V