SP8K3TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

2W

Lead Free :

Lead Free

Terminal Finish :

Tin/Copper (Sn/Cu)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 10V

RoHS Status :

ROHS3 Compliant

Current Rating :

3.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 10V

Operating Temperature :

150°C TJ

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

10

Voltage - Rated DC :

30V

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

11.8nC @ 5V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

7A

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Mounting Type :

Surface Mount

Number of Elements :

2

Base Part Number :

*K3

ECCN Code :

EAR99

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

JESD-609 Code :

e2

Drain-source On Resistance-Max :

0.035Ohm

Pin Count :

8

Rise Time :

10ns

Published :

2004

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

7A