SP8K3FU6TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

30V

Termination :

SMD/SMT

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Factory Lead Time :

17 Weeks

Element Configuration :

Dual

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

*K3

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 10V

Operating Temperature :

150°C TJ

Dual Supply Voltage :

30V

Packaging :

Tape and Reel (TR)

Threshold Voltage :

2.5V

Gate Charge (Qg) (Max) @ Vgs :

11.8nC @ 5V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2W

Mount :

Surface Mount

Continuous Drain Current (ID) :

7A

Published :

2004

Lead Free :

Lead Free

Max Power Dissipation :

2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Nominal Vgs :

2.5 V

FET Type :

2 N-Channel (Dual)

REACH SVHC :

No SVHC

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

7A

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 10V