SP8J5FRATB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.5V @ 1mA

FET Type :

2 P-Channel (Dual)

Number of Terminations :

8

Series :

Automotive, AEC-Q101

DS Breakdown Voltage-Min :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

7A Ta

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

28A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

28m Ω @ 7A, 10V

Operating Temperature :

150°C

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.028Ohm

Surface Mount :

yes

FET Feature :

Logic Level Gate, 4V Drive

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G8

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

2