SIHD9N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

78W Tc

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

778pF @ 100V

Vgs (Max) :

±30V

Height :

2.507mm

Turn-Off Delay Time :

31 ns

Rds On (Max) @ Id, Vgs :

368m Ω @ 4.5A, 10V

Max Junction Temperature (Tj) :

150°C

Packaging :

Cut Tape (CT)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

14 ns

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Factory Lead Time :

18 Weeks

FET Type :

N-Channel

Power Dissipation :

78W

Series :

E

Number of Channels :

1

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Continuous Drain Current (ID) :

9A

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

600V

Gate to Source Voltage (Vgs) :

30V