SIHD2N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

2.9A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

2.9Ohm @ 500mA, 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Series :

E

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

62.5W Tc

Factory Lead Time :

14 Weeks

Supplier Device Package :

D-PAK (TO-252)

Drain to Source Voltage (Vdss) :

800V