SIHD186N60EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

EF

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1118pF @ 100V

FET Type :

N-Channel

Power Dissipation-Max :

156W Tc

Rds On (Max) @ Id, Vgs :

201mOhm @ 9.5A, 10V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

600V

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Supplier Device Package :

D-PAK (TO-252AA)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63