SIHD11N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification :

-

Maximum Operating Temperature :

+ 150 C

Product Category :

MOSFET

Subcategory :

MOSFETs

Continuous Drain Current Id :

8A

Power Dissipation :

78W

Brand :

Vishay / Siliconix

Drive Voltage (Max Rds On, Min Rds On) :

10V

Base Product Number :

SIHD11

Package Type :

DPAK (TO-252)

Mounting Style :

SMD/SMT

Drain to Source Voltage (Vdss) :

800 V

Supplier Device Package :

TO-252AA

Configuration :

Single

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

RoHS :

Details

Channel Mode :

Enhancement

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

804 pF @ 100 V

Transistor Polarity :

N-Channel

Rise Time :

15 ns

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Type :

Surface Mount

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

450mOhm @ 5.5A, 10V

Channel Type :

N

Number of Elements per Chip :

1

Transistor Type :

1 N-Channel

FET Feature :

-

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation (Max) :

78W (Tc)

Vgs (Max) :

±30V

Pin Count :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Package :

Tube

Series :

E

Gate Charge (Qg) (Max) @ Vgs :

42 nC @ 10 V

Number of Channels :

1 Channel

Manufacturer :

Vishay

Minimum Operating Temperature :

- 55 C