SIHD2N80E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

E

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

315pF @ 100V

Turn-Off Delay Time :

19 ns

Power Dissipation :

62.5W

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

19.6nC @ 10V

Power Dissipation-Max :

62.5W Tc

Rds On (Max) @ Id, Vgs :

2.75 Ω @ 1A, 10V

Height :

2.507mm

FET Type :

N-Channel

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

800V

Mounting Type :

Surface Mount

Turn On Delay Time :

11 ns

Continuous Drain Current (ID) :

2.8A

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Factory Lead Time :

14 Weeks

Vgs (Max) :

±30V

Packaging :

Cut Tape (CT)