SIHD1K4N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

4.2A Tc

Mounting Type :

Surface Mount

Series :

E

Power Dissipation-Max :

63W Tc

Supplier Device Package :

TO-252AA

Drain to Source Voltage (Vdss) :

600V

Factory Lead Time :

18 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Bulk

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.45Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

172pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)