SIHD7N60ET4-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.6Ohm

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

18A

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Turn On Delay Time :

13 ns

DS Breakdown Voltage-Min :

609V

Mount :

Surface Mount

FET Type :

N-Channel

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

7A

Series :

E

Number of Terminations :

2

Vgs (Max) :

±30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Number of Pins :

3

Fall Time (Typ) :

14 ns

JEDEC-95 Code :

TO-252AA

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

24 ns

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

18 Weeks

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 100V

Rise Time :

13ns

Power Dissipation-Max :

78W Tc

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

7A