SIHD7N60E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

1.437803g

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Turn On Delay Time :

26 ns

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 100V

Factory Lead Time :

18 Weeks

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

7A

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.6Ohm

Fall Time (Typ) :

28 ns

Element Configuration :

Single

Number of Channels :

1

Drain Current-Max (Abs) (ID) :

7A

Contact Plating :

Tin

Vgs (Max) :

±30V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Mount :

Surface Mount

REACH SVHC :

Unknown

Rise Time :

26ns

Lead Free :

Lead Free

JEDEC-95 Code :

TO-252AA

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Bulk

Terminal Form :

Gull wing

Number of Terminations :

2

Power Dissipation-Max :

78W Tc

Power Dissipation :

78W

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

609V

Threshold Voltage :

2V

Turn-Off Delay Time :

48 ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

Published :

2013