SIHD7N60E-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

600 mΩ

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Element Configuration :

Single

Drain to Source Resistance :

600mOhm

Supplier Device Package :

D-PAK (TO-252AA)

Power Dissipation-Max :

78W Tc

Turn-Off Delay Time :

24 ns

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

18 Weeks

Continuous Drain Current (ID) :

7A

Packaging :

Tape and Reel (TR)

Weight :

1.437803g

Number of Channels :

1

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

600mOhm @ 3.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 100V

Max Operating Temperature :

150°C

Rise Time :

13ns

Mounting Type :

Surface Mount

Input Capacitance :

680pF

Drain to Source Breakdown Voltage :

600V

Fall Time (Typ) :

14 ns

Vgs (Max) :

±30V

Turn On Delay Time :

13 ns

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Published :

2016

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)