SIHD6N80E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

78W Tc

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

820MOhm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

5.4A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

E

Packaging :

Bulk

Input Capacitance (Ciss) (Max) @ Vds :

827pF @ 100V

Drain to Source Voltage (Vdss) :

800V

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

940mOhm @ 3A, 10V

FET Type :

N-Channel

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Supplier Device Package :

D-PAK (TO-252AA)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V