SIHD6N65ET1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

E

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Vgs (Max) :

±30V

Power Dissipation-Max :

78W Tc

Input Capacitance (Ciss) (Max) @ Vds :

820pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Supplier Device Package :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

650V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

600mOhm @ 3A, 10V