SIHD6N65E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Turn On Delay Time :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

JEDEC-95 Code :

TO-252AA

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Threshold Voltage :

2V

Transistor Element Material :

SILICON

Number of Terminations :

2

Rise Time :

12ns

Drain to Source Breakdown Voltage :

650V

Number of Elements :

1

Fall Time (Typ) :

20 ns

Power Dissipation-Max :

78W Tc

Transistor Application :

SWITCHING

Power Dissipation :

78W

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

56 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.6Ohm

Number of Pins :

3

REACH SVHC :

Unknown

Drain Current-Max (Abs) (ID) :

7A

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

30 ns

Mounting Type :

Surface Mount

FET Type :

N-Channel

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

7A

Rds On (Max) @ Id, Vgs :

600m Ω @ 3A, 10V

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Published :

2013

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount, Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

820pF @ 100V