SIHD6N62ET1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Input Capacitance (Ciss) (Max) @ Vds :

578pF @ 100V

Power Dissipation :

78W

Turn-Off Delay Time :

22 ns

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

FET Type :

N-Channel

Supplier Device Package :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

620V

Continuous Drain Current (ID) :

6A

Drain to Source Resistance :

780mOhm

Height :

2.507mm

Min Operating Temperature :

-55°C

Number of Channels :

1

Drain to Source Breakdown Voltage :

620V

Turn On Delay Time :

12 ns

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

900mOhm @ 3A, 10V

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

78W Tc

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

E