SIHD6N62E-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

578pF @ 100V

Rds On Max :

900 mΩ

Turn On Delay Time :

12 ns

Vgs (Max) :

±30V

Element Configuration :

Single

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

900mOhm @ 3A, 10V

Drain to Source Voltage (Vdss) :

620V

Input Capacitance :

578pF

Drain to Source Resistance :

900mOhm

Factory Lead Time :

18 Weeks

Published :

2014

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Radiation Hardening :

No

Weight :

1.437803g

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

6A

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Number of Channels :

1

Supplier Device Package :

D-PAK (TO-252AA)

Rise Time :

10ns

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Fall Time (Typ) :

16 ns

Mount :

Surface Mount

Number of Pins :

3

Packaging :

Tube

Max Operating Temperature :

150°C

REACH SVHC :

Unknown

Turn-Off Delay Time :

22 ns

Power Dissipation-Max :

78W Tc

Min Operating Temperature :

-55°C