SIHD5N80AE-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

MOSFET

Brand :

Vishay / Siliconix

Transistor Polarity :

N-Channel

Package :

Tube

Maximum Operating Temperature :

+ 150 C

FET Feature :

-

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

800 V

Power Dissipation (Max) :

62.5W (Tc)

Qualification :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

4.4A (Tc)

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Subcategory :

MOSFETs

Channel Type :

N

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

16.5 nC @ 10 V

Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer :

Vishay

Mounting Style :

SMD/SMT

Transistor Type :

E Series Power MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

321 pF @ 100 V

Mounting Type :

Surface Mount

RoHS :

Details

Vgs(th) (Max) @ Id :

4V @ 250µA

Product Category :

MOSFET

FET Type :

N-Channel

Rise Time :

8 ns

Number of Elements per Chip :

1

Supplier Device Package :

TO-252AA

Rds On (Max) @ Id, Vgs :

1.35Ohm @ 1.5A, 10V

Channel Mode :

Enhancement

Series :

E

Vgs (Max) :

±30V

Continuous Drain Current Id :

4.4

Pin Count :

3

Package Type :

DPAK (TO-252)

Product Status :

Active

Power Dissipation :

62.5