SIHD5N50D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Rise Time :

11ns

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Mounting Type :

Surface Mount

Height :

2.38mm

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.5A, 10V

Width :

6.22mm

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

5.3A

Power Dissipation-Max :

104W Tc

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Channels :

1

Number of Pins :

3

Mount :

Surface Mount

JEDEC-95 Code :

TO-252AA

Packaging :

Tube

Number of Elements :

1

Weight :

1.437803g

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation :

104W

Length :

6.73mm

Threshold Voltage :

3V

Radiation Hardening :

No

Published :

2012

Drain to Source Breakdown Voltage :

500V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Number of Terminations :

2

Turn On Delay Time :

12 ns

Fall Time (Typ) :

11 ns

REACH SVHC :

Unknown

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

14 ns