SIHD5N50D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

12 ns

Turn-Off Delay Time :

14 ns

Factory Lead Time :

13 Weeks

Number of Pins :

3

Fall Time (Typ) :

11 ns

Pulsed Drain Current-Max (IDM) :

10A

Transistor Application :

SWITCHING

Rise Time :

11ns

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 2.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

104W Tc

Published :

2015

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

5.3A Tc

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Vgs (Max) :

±30V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

325pF @ 100V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

5.3A

Case Connection :

DRAIN

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

500V

Mounting Type :

Surface Mount

Terminal Position :

Single

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA