SIHD3N50D-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Surface Mount

Threshold Voltage :

3V

Power Dissipation :

104W

Gate to Source Voltage (Vgs) :

30V

Published :

2006

Pulsed Drain Current-Max (IDM) :

5.5A

Factory Lead Time :

11 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Breakdown Voltage :

500V

Turn On Delay Time :

12 ns

Packaging :

Tube

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

3A

Turn-Off Delay Time :

11 ns

FET Type :

N-Channel

Height :

2.38mm

Current - Continuous Drain (Id) @ 25°C :

3A Tc

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Weight :

1.437803g

Avalanche Energy Rating (Eas) :

9 mJ

Rds On (Max) @ Id, Vgs :

3.2 Ω @ 2.5A, 10V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252AA

Length :

6.73mm

REACH SVHC :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Vgs (Max) :

±30V

Number of Channels :

1

Fall Time (Typ) :

13 ns

Continuous Drain Current (ID) :

3A

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 100V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Rise Time :

9ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Power Dissipation-Max :

69W Tc

Number of Elements :

1

Width :

6.22mm

Number of Terminations :

2

Transistor Element Material :

SILICON

Terminal Form :

Gull wing