SIHD3N50D-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Published :

2014

Mount :

Surface Mount

Factory Lead Time :

20 Weeks

Drain to Source Voltage (Vdss) :

500V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

12 ns

FET Type :

N-Channel

DS Breakdown Voltage-Min :

500V

RoHS Status :

ROHS3 Compliant

Rise Time :

9ns

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

5.5A

Continuous Drain Current (ID) :

3A

Drain Current-Max (Abs) (ID) :

3A

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Packaging :

Tube

Fall Time (Typ) :

13 ns

Rds On (Max) @ Id, Vgs :

3.2 Ω @ 2.5A, 10V

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Power Dissipation-Max :

69W Tc

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Number of Pins :

3

Turn-Off Delay Time :

11 ns

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 250μA

JEDEC-95 Code :

TO-252AA

Avalanche Energy Rating (Eas) :

9 mJ

Number of Elements :

1