SIB912DK-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

20V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Length :

1.6mm

Weight :

95.991485mg

Case Connection :

DRAIN

Rise Time :

10ns

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

216m Ω @ 1.8A, 4.5V

Max Power Dissipation :

3.1W

Base Part Number :

SIB912

Number of Channels :

2

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Width :

1.6mm

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Fall Time (Typ) :

10 ns

Threshold Voltage :

400mV

Turn On Delay Time :

5 ns

Pbfree Code :

yes

Radiation Hardening :

No

Power Dissipation :

1.1W

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

1.5A

Height :

750μm

Published :

2013

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

20V

Pin Count :

6

Package / Case :

PowerPAK® SC-75-6L Dual

Mount :

Surface Mount

Series :

TrenchFET®

Input Capacitance (Ciss) (Max) @ Vds :

95pF @ 10V

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn-Off Delay Time :

24 ns

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 8V

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Element Configuration :

Dual